Manufacturer Part Number | A2G35S200-01SR3 |
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Manufacturer | NXP USA Inc. |
Product Category | Transistors - FETs, MOSFETs - RF |
Available Quantity | 95660 Pieces |
Unit Price | Quote by Email ([email protected]) |
Description | AIRFAST RF POWER GAN TRANSISTOR |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Production Status (Lifecycle) | In Production |
Delivery Time | 1-2 Days |
Date Code (D/C) | New |
Datasheet Download | A2G35S200-01SR3.pdf |
Part Number | A2G35S200-01SR3 |
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Manufacturer Lead time | 6-8 weeks |
Condition | New & Unused, Original Sealed |
Part Status | Active |
Transistor Type | LDMOS |
Frequency | 3.4GHz ~ 3.6GHz |
Gain | 16.1dB |
Voltage - Test | 48V |
Current Rating | - |
Noise Figure | - |
Current - Test | 291mA |
Power - Output | 180W |
Voltage - Rated | 125V |
Package / Case | NI-400S-2S |
Supplier Device Package | NI-400S-2S |
Weight | 0.001 KG |
Application | Email for details |
Replacement Part | A2G35S200-01SR3 |
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