Infineon Technologies Distributor www.qycomp.com IPI041N12N3GAKSA1
Manufacturer Part NumberIPI041N12N3GAKSA1
ManufacturerInfineon Technologies
Product CategoryTransistors - FETs, MOSFETs - Single
Available Quantity82630 Pieces
Unit PriceQuote by Email ([email protected])
DescriptionMOSFET N-CH 120V 120A TO262-3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Production Status (Lifecycle)In Production
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPI041N12N3GAKSA1.pdf

Product Detailed Description

Part Number IPI041N12N3GAKSA1
Manufacturer Lead time 6-8 weeks
Condition New & Unused, Original Sealed
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 211nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800pF @ 60V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Weight 0.001 KG
Application Email for details
Replacement Part IPI041N12N3GAKSA1

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Infineon Technologies Distributor

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MOSFET N-CH 120V 120A TO262-3