Infineon Technologies Distributor www.qycomp.com IPD122N10N3GBTMA1
Manufacturer Part NumberIPD122N10N3GBTMA1
ManufacturerInfineon Technologies
Product CategoryTransistors - FETs, MOSFETs - Single
Available Quantity89850 Pieces
Unit PriceQuote by Email ([email protected])
DescriptionMOSFET N-CH 100V 59A TO252-3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Production Status (Lifecycle)In Production
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPD122N10N3GBTMA1.pdf

Product Detailed Description

Part Number IPD122N10N3GBTMA1
Manufacturer Lead time 6-8 weeks
Condition New & Unused, Original Sealed
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 12.2 mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 50V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 0.001 KG
Application Email for details
Replacement Part IPD122N10N3GBTMA1

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