Infineon Technologies Distributor www.qycomp.com IPD80R1K4CEATMA1
Manufacturer Part NumberIPD80R1K4CEATMA1
ManufacturerInfineon Technologies
Product CategoryTransistors - FETs, MOSFETs - Single
Available Quantity55090 Pieces
Unit PriceQuote by Email ([email protected])
DescriptionMOSFET N-CH 800V 3.9A TO252-3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Production Status (Lifecycle)In Production
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPD80R1K4CEATMA1.pdf

Product Detailed Description

Part Number IPD80R1K4CEATMA1
Manufacturer Lead time 6-8 weeks
Condition New & Unused, Original Sealed
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 0.001 KG
Application Email for details
Replacement Part IPD80R1K4CEATMA1

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Infineon Technologies Distributor

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